SBR10150CTB

SBR10150CT SBR10150CTF SBR10150CTI SBR10150CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF(AV) Rectangular Waveform VRRM VF@5A, Tj=125℃ Tj(operating/storage) 10 150 0.69 -65 to 150 Units A V V, typ ℃ Device optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply applications ELECTRICAL: * Ultra-Low Forward Voltage Drop * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability * 150OC Operating Junction Temperature MECHANICAL: * Molded Plastic TO-220AB, TO-262, TO-263, and ITO-220 packages Case Styles SBR10150CT SBR10150CTF SBR10150CTI SBR10150CTB 2 1 Anode Common Cathode Anode 3 Anode 1 Common Cathode 2 Anode 3 Anode 1 Common Cathode 2 2 Anode 3 Anode 1 Common Cathode Anode 3 TO-220AB ITO-220 TO-262 TO-263 ________________________________________________________________________________________________ Version 1.0 - August 2006 www.apdsemi.com 1 SBR10150CT SBR10150CTF SBR10150CTI SBR10150CTB Maximum Ratings and Electrical Characteristics (at 25OC unless otherwise specified) SYMBOL DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Peak Forward Surge Current - 1/2 60hz Peak Repetitive Reverse Surge Current (2uS-1Khz) Instantaneous Forward Voltage ...