SBR10150CT SBR10150CTF SBR10150CTI SBR10150CTB
Using state-of-the-art SBR IC process technology, the following features...
SBR10150CT SBR10150CTF SBR10150CTI SBR10150CTB
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Values Characteristics
IF(AV) Rectangular Waveform VRRM VF@5A, Tj=125℃ Tj(operating/storage) 10 150 0.69 -65 to 150
Units
A V V, typ
℃
Device optimized for ultra-low forward
voltage drop to maximize efficiency in Power Supply applications
ELECTRICAL: * Ultra-Low Forward
Voltage Drop * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability * 150OC Operating Junction Temperature
MECHANICAL: * Molded Plastic TO-220AB, TO-262, TO-263, and ITO-220 packages
Case Styles SBR10150CT SBR10150CTF SBR10150CTI SBR10150CTB
2 1
Anode Common Cathode Anode
3
Anode
1
Common Cathode
2
Anode
3
Anode
1
Common Cathode
2
2
Anode
3
Anode
1
Common Cathode
Anode
3
TO-220AB
ITO-220
TO-262
TO-263
________________________________________________________________________________________________ Version 1.0 - August 2006 www.apdsemi.com 1
SBR10150CT SBR10150CTF SBR10150CTI SBR10150CTB
Maximum Ratings and Electrical Characteristics (at 25OC unless otherwise specified)
SYMBOL DC Blocking
Voltage Working Peak Reverse
Voltage Peak Repetitive Reverse
Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Peak Forward Surge Current - 1/2 60hz Peak Repetitive Reverse Surge Current (2uS-1Khz) Instantaneous Forward
Voltage ...