SBP13007S
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed ◆ High Voltage Capabili...
SBP13007S
High
Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed ◆ High
Voltage Capability ◆ Wide Reverse Bias SOA
General Description
This Device is designed for high
voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 2.1 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃
Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink)
Thermal Characteristics
Symbol www.DataSheet4U.com RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units ℃/W ℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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SBP13007S
Electrical Characteristics (TC=25℃
unless otherwise noted)
Symbol VCEO(sus)
Value Parameter Collector-Emitter Breakdown
Voltage Test Conditions Ic=10mA,Ib=0 Ic=2.0A,Ib=0.4A Ic=5.0A,Ib=1.0A Min 400 Typ Max 0.5 1.0 2.5 2.5 1.2 1.6 1.5 1.0 5.0 40 40
Units V
V
VCE(sat)
Collector-Emitter Saturation
Voltage
Ic=8.0A,Ib=2.0A Ic=5.0A,Ib=1.0A Tc=100℃ Ic=2.0A,Ib...