SBP13007-H1

SemiWell Semiconductor SBP13007- H1 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical [email protected]) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description TO-220 This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system. 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 5 ms ) Base Current Base Peak Current ( tP ＜ 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 8.0 16 4.0 8.0 80 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA www.DataSheet4U.com Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 1.56 62.5 Units °C/W °C/W Aug, 2003. Rev. 3 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 SBP13007-H1 Electrical Characteristics Symbol ICEV ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 2.0A IC = 5.0A IC = 8.0A IC = 5.0A IB = 0.4A IB = 1.0A IB = 2.0A IB = 1.0A TC = 100 °C IB = 0.4A ...