SemiWell Semiconductor
SBP13005
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed ...
SemiWell Semiconductor
SBP13005
High
Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed (Typical
[email protected]) ◆ Minimum Lot-to-Lot hFE Variation ◆ Low VCE(sat) (Typical
[email protected]/0.5A) ◆ Wide Reverse Bias S.O.A Symbol
○
2.Collector
1.Base
○
c
○
3.Emitter
General Description
This devices is designed for high
voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-220
1
2
3
Absolute Maximum Ratings
Symbol
VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ
Parameter
Collector-Emitter
Voltage ( VBE = 0 ) Collector-Emitter
Voltage ( IB = 0 ) Emitter-Base
Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature
Value
700 400 9.0 4.0 8.0 2.0 4.0 75 - 65 ~ 150 150
Units
V V V A A A A W °C °C
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Value
1.67 62.5
Units
°C/W °C/W
Oct, 2002. Rev. 1
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
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SBP13005
Electrical Characteristics
Symbol
ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted )
Parameter
Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining
Voltage ( IB = 0 )
Condition
VCE = 700V VCE = 700V IC = 10 mA IC = 1.0A IC = 2.0A IC = 4.0A IC = 1.0A IC = 2.0A...