Leaded Schottky Barrier Rectifiers
SB520-G Thru. SB5100-G
Voltage: 20 to 100 V Current: 5.0 A RoHS Device
Features
-Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications -Lead-free part, meet RoHS requirements.
Comchip SMD Diode Specialist
DO-201AD
0.210(5.3) 0.189(4.8)
1.0(25.4) Min.
0.375(9.5) 0.287(7.3)
Mech.
Leaded Schottky Barrier Rectifiers
Leaded Schottky Barrier Rectifiers
SB520-G Thru. SB5100-G
Voltage: 20 to 100 V Current: 5.0 A RoHS Device
Features
-Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications -Lead-free part, meet RoHS requirements.
Comchip SMD Diode Specialist
DO-201AD
0.210(5.3) 0.189(4.8)
1.0(25.4) Min.
0.375(9.5) 0.287(7.3)
Mechanical data
-Epoxy: UL94-V0 rated flame retardant -Case: Molded plastic body DO-201AD -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end -Mounting Position: Any -Weight: 1.12grams
0.052(1.30) 0.048(1.20)
1.0(25.4) Min.
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Maximum recurrent peak reverse voltage
Symbol
SB 520-G
.