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SB50-18

Sanyo Semicon Device

180V/ 5A Rectifier

Ordering number:EN2579B SB50-18 Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 5A Rectifier Applications · ...


Sanyo Semicon Device

SB50-18

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Description
Ordering number:EN2579B SB50-18 Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 5A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1159B [SB50-18] Features · Low forward voltage (VF max=0.85V). · Fast reverse recovery time (trr max=40ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. JEDEC:TO-220AB EIAJ:SC-46 1:Anode 2:Cathode 3:Anode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings 180 190 Unit V V A A 50Hz, resistive load, Tc=103˚C 50Hz sine wave, 1 cycle 5 60 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rthj-c IR=2mA, Tj=25˚C, * IF=2A, Tj=25˚C, * VR=90V, Tj=25˚C, * IF=2A, Tj=25˚C, *, –dIF/dt=10A/µs Conditons Ratings min 180 0.85 0.4 40 2.5 typ max Unit V V mA ns ˚C/W Junction-Case:Smoothed DC Note*:Value per element Electrical Connection 1:Anode 2:Cathode 3:Anode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41098HA (KT)/5248TA, TS No.2579-1/3 SB50-18 No.2579-2/3 S...




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