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SB30-09

Sanyo Semicon Device

90V/ 3A Rectifier

Ordering number:EN2586B SB30-09 Schottky Barrier Diode (Twin Type · Cathode Common) 90V, 3A Rectifier Applications · H...


Sanyo Semicon Device

SB30-09

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Description
Ordering number:EN2586B SB30-09 Schottky Barrier Diode (Twin Type · Cathode Common) 90V, 3A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1159A [SB30-09] Features · Low forward voltage (VF max=0.85V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. A:Anode C:Cathode JEDEC:TO-220AB EIAJ:SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings 90 95 Unit V V A A 50Hz, resistive load, Tc=105˚C 50Hz sine wave, 1 cycle 3 40 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rthj-c Conditons IR=0.5mA, Tj=25˚C, * IF=1.2A, Tj=25˚C, * VR=45V, Tj=25˚C, * IF=2A, Tj=25˚C, *,–dIF/dt=10A/µs Junction-Case:Smoothed DC Ratings min 90 0.85 0.2 30 5.0 typ max Unit V V mA ns ˚C/W Note:* Value per element Electrical Connection A:Anode C:Cathode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41098HA (KT)/1218AT, TS No.2586-1/3 SB30-09 No.2586-2/3 SB30-09...




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