Leaded Schottky Barrier Rectifiers
SB220-G Thru. SB2100-G
Voltage: 20 to 100 V Current: 2.0 A RoHS Device
Features
-Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications -Lead-free part, meet RoHS requirements.
Comchip SMD Diode Specialist
DO-41
.107(2.7) .080(2.0)
1.0(25.4) Min.
.205(5.2) .160(4.1)
Mechanical .
Leaded Schottky Barrier Rectifiers
Leaded Schottky Barrier Rectifiers
SB220-G Thru. SB2100-G
Voltage: 20 to 100 V Current: 2.0 A RoHS Device
Features
-Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications -Lead-free part, meet RoHS requirements.
Comchip SMD Diode Specialist
DO-41
.107(2.7) .080(2.0)
1.0(25.4) Min.
.205(5.2) .160(4.1)
Mechanical data
-Epoxy: UL94-V0 rated flame retardant -Case: Molded plastic body DO-41 -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end -Mounting Position: Any -Weight: 0.4 grams
.034(0.86) .028(0.70)
1.0(25.4) Min.
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Maximum recurrent peak reverse voltage
Symbol
SB 220-G
VRRM
20
S.