Semiconductor
SB2335-G
High Brightness Chip LED Lamp
Features
• • • • Colorless transparency lens type Compact type Ra...
Semiconductor
SB2335-G
High Brightness Chip LED Lamp
Features
Colorless transparency lens type Compact type Radiation size 3.5mm ×2.8mm Surface mount lead configuration
Applications
LCD backlighting Keypad backlighting Symbol backlighting Front panel indicator lamp
Outline Dimensions
unit :
mm
PIN Connections 1. Cathode 2. Anode
KLB-3004-000
1
SB2335-G
Absolute maximum ratings
Characteristic
Power Dissipation Forward Current * Peak Forward Current Reverse
Voltage Operating Temperature Storage Temperature
2 1
Symbol
PD IF IFP VR Topr Tstg
Ratings
80 20 50 4 -40∼100 -40∼110 240℃ for 5 seconds
Unit
mW mA mA V ℃ ℃
* Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Recommended soldering condition ⇒ Attached
Electrical Characteristics
Characteristic
Forward
Voltage
Symbol
VF IV
Test Condition
IF= 20mA IF= 20mA IF= 20mA IF= 20mA VR=4V
Min
2.6 68 -
Typ
3.3 80 468 20 ±55
Max
4.2 155 10 -
Unit
V mcd nm nm µA deg
* Luminous Intensity
Peak Wavelength Spectrum Bandwidth Reverse Current
4
3
λP Δλ IR
IF= 20mA * Half angle θ1/2 *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *4. Luminous intensity maximum tolerance for each grade classification limits ±18% *4. Luminous Intensity classification
K
68~100
L
100~155
KLB-3004-000
2
SB2335-G
Characteristic Diagrams
Fig. 1 IF - VF Fig. 2 IV - IF
Forward Current IF [mA]
Forward
Voltage VF [V]
Luminous Intensity Iv [mcd]
Forward Current IF ...