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SB120-05H

Sanyo Semicon Device

40V/ 1.1A Rectifier

Ordering number :EN1981A SB120-05H Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 12A Rectifier Applications...


Sanyo Semicon Device

SB120-05H

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Description
Ordering number :EN1981A SB120-05H Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 12A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1160 [SB120-05H] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=70ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. C:Cathode A:Anode SANYO:TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surege Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings –50 –55 Unit V V A A 50Hz, resistive load, Tc=110˚C 50Hz sine wave, 1 cycle 12 120 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rthj-c Conditions Ratings min –50 0.55 –0.6 70 1.5 typ max Unit V V mA ns IR=–3mA, Tj=25˚C* IF=6A, Tj=25˚C* VR=–25V, Tj=25˚C* IF=2A, Tj=25˚C*, –dIF/dt=10A/µs Junction-Case:Smoothed DC ˚C/W Note)*:Value per element Electrical Connection A:Anode C:Cathode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22898HA (KT)/4198TA, TS No.1981-1/3 SB120-05H No.1981-2/3 SB120-05H No products de...




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