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SB100-05H Datasheet

Part Number SB100-05H
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 50V/ 10A Rectifier
Datasheet SB100-05H DatasheetSB100-05H Datasheet (PDF)

Ordering number :EN2950A SB100-05H Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 10A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1159A [SB100-05H] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=60ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. C:Cathode A:Anode JEDEC:TO-220AB EIAJ:SC-46 Specificat.

  SB100-05H   SB100-05H






Part Number SB100-05J
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 50V/ 10A Rectifier
Datasheet SB100-05H DatasheetSB100-05J Datasheet (PDF)

Ordering number :EN2949 SB100-05J Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 10A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1178 [SB100-05J] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=60ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. A:Anode C:.

  SB100-05H   SB100-05H







50V/ 10A Rectifier

Ordering number :EN2950A SB100-05H Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 10A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1159A [SB100-05H] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=60ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. C:Cathode A:Anode JEDEC:TO-220AB EIAJ:SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surege Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings –50 –55 Unit V V A A 50Hz, resistive load, Tc=105˚C 50Hz sine wave, 1 cycle 10 100 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr Rthj-c Conditions Ratings min –50 0.56 –0.5 60 2.5 typ max Unit V V mA ns IR=–2mA, Tj=25˚C* IF=5A, Tj=25˚C* VR=–25V, Tj=25˚C* IF=2A, Tj=25˚C*, –dIF/dt=10A/µs Junction-Case:Smoothed DC ˚C/W Note)*:Value per element Electrical Connection A:Anode C:Cathode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22898HA (KT)/N298TA, TS No.2950-1/3 SB100-05H No.2950-2/3 SB100-05H .


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