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SB05-18V Datasheet

Part Number SB05-18V
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 180V / 500mA Rectifier
Datasheet SB05-18V DatasheetSB05-18V Datasheet (PDF)

Ordering number:EN5683 SB05-18V Schottky Barrier Diode 180V, 500mA Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Features · Low forward voltage (VF max=0.85V). · Fast reverse recovery time (trr max=20ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. Package Dimensions unit:mm 1289 [SB05-18V] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse.

  SB05-18V   SB05-18V






Part Number SB05-18M
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 180V / 500mA Rectifier
Datasheet SB05-18V DatasheetSB05-18M Datasheet (PDF)

Ordering number:EN2655A SB05-18M Schottky Barrier Diode 180V, 500mA Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Features · Low forward voltage (VF max=0.85V). · Fast revese recovery time (trr max=20ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. Package Dimensions unit:mm 1158 [SB05-18M] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse.

  SB05-18V   SB05-18V







180V / 500mA Rectifier

Ordering number:EN5683 SB05-18V Schottky Barrier Diode 180V, 500mA Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Features · Low forward voltage (VF max=0.85V). · Fast reverse recovery time (trr max=20ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. Package Dimensions unit:mm 1289 [SB05-18V] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions 50Hz resistive load, Ta=26˚C 50Hz sine wave, 1 cycle Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance trr Test Circuit Symbol Conditions VR VF IR C trr Rth(j-a) IR=500µA IF=500mA VR=90V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit 1:Anode 2:Cahode 3:No Contact SANYO:NMP Ratings 180 190 500 10 125 –55 to +125 Unit V V mA A ˚C ˚C Ratings min typ 180 45 110 max 0.85 60 20 Unit V V µA pF ns ˚C/W SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71598HA (KT)/12797GI (KOTO) TA-0770 No.5683-1/2 SB05-18V No products described or contained herein are intended for use in surgical implants, .


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