DatasheetsPDF.com

SA1920 Datasheet

Part Number SA1920
Manufacturers Philips
Logo Philips
Description Dual-band RF front-end
Datasheet SA1920 DatasheetSA1920 Datasheet (PDF)

INTEGRATED CIRCUITS SA1920 Dual-band RF front-end Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook 1999 Mar 02 Philips Semiconductors Philips Semiconductors Product specification Dual-band RF front-end SA1920 DESCRIPTION The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz fT BiCMOS process—QUBiC1. The low-band is a combined low-noise amplifier (LNA).

  SA1920   SA1920






Part Number SA1921
Manufacturers Philips
Logo Philips
Description Satellite and cellular dual-band RF front-end
Datasheet SA1920 DatasheetSA1921 Datasheet (PDF)

INTEGRATED CIRCUITS SA1921 Satellite and cellular dual-band RF front-end Product specification Supersedes data of 1998 Sep 11 IC17 Data Handbook 1999 Mar 02 Philips Semiconductors Philips Semiconductors Product specification Satellite and cellular dual-band RF front-end SA1921 DESCRIPTION The SA1921 is an integrated dual-band RF front-end that operates at both cellular (AMPS, DAMPS, and GSM) and satellite (1515–1600 MHz) frequencies, and is designed in a 13 GHz fT BiCMOS process—QUBiC1. T.

  SA1920   SA1920







Dual-band RF front-end

INTEGRATED CIRCUITS SA1920 Dual-band RF front-end Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook 1999 Mar 02 Philips Semiconductors Philips Semiconductors Product specification Dual-band RF front-end SA1920 DESCRIPTION The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz fT BiCMOS process—QUBiC1. The low-band is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz with 17.5 dB of gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain and an IIP3 of +5 dBm. The high-band contains a receiver front-end, doubler and a high frequency transmit mixer intended for closed loop transmitters. One advantage of the high-band architecture is an image-rejection mixer with over 30 dB of image rejection; thus, eliminating external filter cost while saving board space. The system noise figure is 4.2 dB at 1960 MHz with a power gain of 23.5 dB and an IIP3 of –12.5 dB. FEATURES • Low current consumption • Outstanding low- and high-band noise figure • Excellent gain stability versus temperature and supply • Image reject high-band mixer with over 30 dB of rejection • Increased low-band LNA gain compression during analog • LO input and output buffers • Frequency doubler • On chip logic for network selection and power down • Very small outline package AP.


2005-05-17 : MC145151    HRS2H-S    STV5111    STPR1010CT    STPR1020CT    TBA810P    TBA810S    STK4191    STK4191V    PSF21911   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)