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S9011

GME

NPN Transistor

NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.(IC= 30mA)  Power dissipation.(PC=200mW) APPLICAT...


GME

S9011

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Description
NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.(IC= 30mA)  Power dissipation.(PC=200mW) APPLICATIONS Pb Lead-free  AM converter, AM/FM if amplifier general purpose transistor Production specification S9011 ORDERING INFORMATION Type No. Marking S9011 1T SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 30 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transit...




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