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S886T Datasheet

Part Number S886T
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description MOSMIC
Datasheet S886T DatasheetS886T Datasheet (PDF)

S886T/S886TR Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. C block AGC RF in C block G2 G1 S D RF out C block 94 9296 Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 12 V supply voltage. RFC VDD Features D D D D Integrated gate protection diodes Low noise figure High gain Biasing network on chip D Improved cross modulation at .

  S886T   S886T






Part Number S886TR
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description MOSMIC
Datasheet S886T DatasheetS886TR Datasheet (PDF)

S886T/S886TR Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. C block AGC RF in C block G2 G1 S D RF out C block 94 9296 Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 12 V supply voltage. RFC VDD Features D D D D Integrated gate protection diodes Low noise figure High gain Biasing network on chip D Improved cross modulation at .

  S886T   S886T







MOSMIC

S886T/S886TR Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. C block AGC RF in C block G2 G1 S D RF out C block 94 9296 Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 12 V supply voltage. RFC VDD Features D D D D Integrated gate protection diodes Low noise figure High gain Biasing network on chip D Improved cross modulation at gain reduction D High AGC-range D SMD package 1 2 2 1 94 9279 13 579 94 9278 95 10831 3 4 4 3 S886T Marking: 982 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 S886TR Marking: 82R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 16 ID 30 ±IG1/G2SM 10 ±VG1/G2SM 7.5 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA V mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85057 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (8) S886T/S886TR Vishay Tele.


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