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S852 Datasheet

Part Number S852
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon NPN Planar RF Transistor
Datasheet S852 DatasheetS852 Datasheet (PDF)

S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz 1 D Low noise figure D High power gain 1 13 581 94 9280 13 652 13 570 2 3 2 3 S852T Marking: 852 1 = Collector, 2 = Base, 3 = Emitter S852TW Marking: W52 Plastic.

  S852   S852






Part Number S85QR
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Standard Recovery Diode
Datasheet S852 DatasheetS85QR Datasheet (PDF)

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S85K thru S85QR VRRM = 800 V - 1200 V IF = 85 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S85K (R) S85M (R) Repetitive peak reverse voltage RMS reverse volt.

  S852   S852







Part Number S85Q
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Standard Recovery Diode
Datasheet S852 DatasheetS85Q Datasheet (PDF)

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S85K thru S85QR VRRM = 800 V - 1200 V IF = 85 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S85K (R) S85M (R) Repetitive peak reverse voltage RMS reverse volt.

  S852   S852







Part Number S85N16S
Manufacturers SI-TECH
Logo SI-TECH
Description N-Channel MOSFET
Datasheet S852 DatasheetS85N16S Datasheet (PDF)

SI-TECH SEMICONDUCTOR CO.,LTD S85N16R/S N-Channel MOSFET Features █ 85V,160A,Rds(on)(typ)=4.6mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC.

  S852   S852







Part Number S85N16R
Manufacturers SI-TECH
Logo SI-TECH
Description N-Channel MOSFET
Datasheet S852 DatasheetS85N16R Datasheet (PDF)

SI-TECH SEMICONDUCTOR CO.,LTD S85N16R/S N-Channel MOSFET Features █ 85V,160A,Rds(on)(typ)=4.6mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC.

  S852   S852







Part Number S85N14S
Manufacturers SI-TECH
Logo SI-TECH
Description N-Channel MOSFET
Datasheet S852 DatasheetS85N14S Datasheet (PDF)

SI-TECH SEMICONDUCTOR CO.,LTD S85N14R/S/RP N-Channel MOSFET Features █ 85V,140A,Rds(on)(typ)=5.8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotiv.

  S852   S852







Silicon NPN Planar RF Transistor

S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz 1 D Low noise figure D High power gain 1 13 581 94 9280 13 652 13 570 2 3 2 3 S852T Marking: 852 1 = Collector, 2 = Base, 3 = Emitter S852TW Marking: W52 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 125 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85052 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (7) S852T/S852TW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward curr.


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