S6307
SiC Schottky Barrier Diode
VR 1200V IF 30A*1 QC 82nC
Features 1) Shorter recovery time 2) Reduced temperature de...
S6307
SiC Schottky Barrier Diode
VR 1200V IF 30A*1 QC 82nC
Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
Inner Circuit
Construction Silicon carbide epitaxial planar type Schottky diode
Datasheet
Absolute Maximum Ratings (Tj = 25°C ) Parameter
Symbol
Value
Reverse
voltage (repetitive peak)
VRM 1200
Reverse
voltage (DC)
VR 1200
Continuous forward current
IF 30
Surge nonrepetitive forward current
i2t value
PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C
IFSM *2
∫i2d*t2
190 140 780 195 109
Junction temperature
Tj 175
Range of storage temperature
Tstg 55 to 175
*1 Limited by Tj *2 Assumes Zth(j-a) of 0.36 °C/W or less. (Pulse Width = 8.3ms)
Unit V V A A A A A2s A2s °C °C
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2017.12 - Rev.A
S6307
Datasheet
Electrical characteristics (Tj = 2...