S524AD0XD1/D0XF1
128K/256K-bit Serial EEPROM for Low Power
Data Sheet
OVERVIEW
The S524AD0XD1/D0XF1 serial EEPROM has a...
S524AD0XD1/D0XF1
128K/256K-bit Serial EEPROM for Low Power
Data Sheet
OVERVIEW
The S524AD0XD1/D0XF1 serial EEPROM has a 128K/256K-bit (16,384/32,768 bytes) capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsung’s most advanced
CMOS technology. It has been developed for low power and low
voltage applications (1.8 V to 5.5 V). One of its major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 64 bytes of data into the EEPROM in a single write operation. Another significant feature of the S524AD0XD1/D0XF1 is its support for fast mode and standard mode.
FEATURES
I2C-Bus Interface Two-wire serial interface Automatic word address increment Operating Characteristics Operating
voltage — 1.8 V to 5.5 V Operating current — Maximum write current: < 3 mA at 5.5 V — Maximum read current: < 400 µA at 5.5 V — Maximum stand-by current: < 1 µA at 5.5 V Operating temperature range — – 25°C to + 70°C (commercial) — – 40°C to + 85°C (industrial) Operating clock frequencies — 400 kHz at standard mode — 1 MHz at fast mode Electrostatic discharge (ESD) — 5,000 V (HBM) — 500 V (MM) Packages 8-pin DIP, and TSSOP
EEPROM 128K/256K-bit (16,384/32,768 bytes) storage area 64-byte page buffer Typical 3 ms write cycle time with auto-erase function Hardware-based write protec...