S2800

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by S2800/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts A S2800 Series SCRs 10 AMPERES RMS 50 thru 800 VOLTS G K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 100°C, Gate Open) F A B S2800 D M N Peak Non-repetitive Reverse Voltage and Non-Repetitive Off-State Voltage(1) F A B D M N IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Symbol VRRM VDRM 50 100 200 400 600 800 VRSM VDSM 75 125 250 500 700 900 10 100 40 16 0.5 –40 to +100 –40 to +150 Amps Amps A2s Watts Watt °C °C Volts Value Unit Volts S2800 RMS Forward Current (All Conduction Angles) TC = 75°C Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (t p 10 µs) Forward Average Gate Power Operating Junction Temperature Range Storage Temperature Range 1. VDRM and VRRM for all types can be applied on a continuous basis. Rati...