S268P

S268P Vishay Telefunken Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2. Features D D D D D D D Three photodiodes with common cathode Fast response times Small junction capacitance High photo sensitivity Large radiant sensitive area (A = 3 x 7.5 mm2) Wide angle of half sensitivity ϕ = ± 65° Suitable for visible and near infrared radiation 94 8684 Applications High speed and high sensitive PIN photodiode array for industrial applications, measuring and control Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 –55...+100 260 350 Unit V mW °C °C °C K/W x 25 °C t 3 s, mounted on plated, printed board x Document Number 81538 Rev. 2, 20-May-99 www.vishay.de FaxBack +1-408-970-5600 1 (5) S268P Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light g Current Test Conditions IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 ...