S2005AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a pl...
S2005AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
High
voltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
SYMBOL
TO-3PM
CONDITIONS VBE = 0V MIN MAX 1500 600 8 15 125 1.5 2.0 1.0 UNIT V V A A W V A V s
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Collector saturation current Diode forward
voltage Fall time
Tmb 25 IC = 4.5A; IB = 2.0A f = 16KHz IF=4.0A IC=4.5A,IB1=-IB2=1.2A,VCC=140V
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj
PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Emitter-base
voltage(open collector) Collector current (DC) Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN
Tmb 25 -55
MAX 1500 600 5 8 4 6 125 150 150
UNIT V V V A A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf
PARAMETER Collector-emitter cut-off current
Collector-emitter sustaining
voltage Collector-emitter saturation
voltages Base-emitter satuation
voltage DC current gain Diode forward
voltage Transition frequency at f = 1MHz Collector capacitance at f =...