S175-50

S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is built using Gold Topside Metal, diffused emitter ballast resistors and silicon nitride passivation, providing the user with the Highest MTTF available. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 270 Watts Maximum Voltage and Current BVces Collector to Emiter Voltage BVebo Emitter to Base Voltage Ic Collector Current 110 Volts 4.0 Volts 20 A Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to +150oC +200oC CASE OUTLINE 55HX, Style 2 ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg ηc VSWR Power Output Power Input Power Gain Efficiency Load Mismatch Tolerance F = 30 MHz Vcc = 50 Volts At Rated Power Out 175 Watts 3.5 Watts 17 17.5 dB 65 % 30:1 BVebo BVces BVceo Zin ZI Cob hFE IMD Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Series Input Impedance Series Load Impedance Output Capacitance DC - Current Gain Intermodulation Distortion Lev. Ie = 10 mA Ic = 100 mA Ie = 100 mA At Rated Pout & Freq. At Rated Pout & Freq. Vcb = 50 V, Ie = 0 Vce = 5 V, Ic = 2 A At Rated Pout 4 110 53 0.6-j0.4 4.6+2.1 180 10 -35 Volts...