MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-...
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Features Low Forward
Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O ESD: 8KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives
S10C30 thru S10C60
SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 30-60 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
S10C
Symbol
Unit
30 35 40 45 50 60
Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage
VRRM VRWM 30 35 40 45 50 60 V
VR
RMS Reverse
Voltage
VR(RMS) 21 25 28 32 35 42 V
Average Rectifier Forward Current ( Per doode ) Total Device (Rated VR), TC=125
IF(AV)
5.0 10
A
Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz)
IFM
10
A
Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single
IFSM
phase, 60Hz)
125
A
Operating and Storage Junction Temperature Range
TJ , Tstg
-65 to +150
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneo...