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S10A70

Mospec Semiconductor

SCHOTTKY BARRIER RECTIFIERS

MOSPEC S10A70 Thru S10A100 Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum ba...



S10A70

Mospec Semiconductor


Octopart Stock #: O-365494

Findchips Stock #: 365494-F

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Description
MOSPEC S10A70 Thru S10A100 Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory ESD: 4KV(Min.) Human-Body Model SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 70-100 VOLTS TO-220A In compliance with EU RoHs 2002/95/EC directives MAXIMUM RATINGS Characteristic Symbol S10A70 S10A80 S10A90 S10A100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 RMS Reverse Voltage Average Rectifier Forward Current Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range VR(RMS) IF(AV) IFM IFSM TJ , TSTG 49 80 90 100 56 63 10 10 200 -65 to +150 70 V V A A A ELECTRIAL CHARACTERISTICS Characteristic Symbol S10A70 S10A80 S10A90 S10A100 Maximum Instantaneous Forward Voltage ( IF =10 Amp TC = 25 ) ( IF =10 Am...




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