S-LP3407LT1G

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS I D (V GS = -10V) RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -30V -4.1A < 70mΩ < 100m Ω FEATURES The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. S- Prefix for Automotive and Other Applications Req uiring Uniq ue Site and Control Change Req uirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LP3407LT1G S-LP3407LT1G LP3407LT3G S-LP3407LT3G Marking A07 A07 Shipping 3000/Tape&Reel 10000/Tape&Reel LP3407LT1G S-LP3407LT1G 3 1 2 SOT– 23 (TO–236AB) D G S MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ, TSTG Maximum -30 ±20 -4.1 -3.5 -25 1.4 0.9 -55 to 150 Units V V A W °C THERMAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 70 100 63 Max Units 90 °C/W 125 °C/W 80 °C/W A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends o...