LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode MOSFET
VDS= -8V RDS(ON), [email protected], Ids@"3.5A = 68 mΩ RDS(ON),...
LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode
MOSFET
VDS= -8V RDS(ON),
[email protected], Ids@"3.5A = 68 mΩ RDS(ON),
[email protected], Ids@"3A = 81 mΩ RDS(ON),
[email protected], Ids@"2A = 118 mΩ
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche
Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements . S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
LP2305DSLT1G S-LP2305DSLT1G
3
1 2
SOT– 23 (TO–236AB)
3D
G 1 S 2
Ordering Information
Device
LP2305DSLT1G S-LP2305DSLT1G
LP2305DSLT3G S-LP2305DSLT3G
Marking P5S
P5S
Shipping 3000/Tape&Reel
10000/Tape&Reel
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source
Voltage
VDS - 8
Gate-Source
Voltage
VGS ± 8
Continuous Drain Current Pulsed Drain Current 1)
ID -3.5 IDM -12
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Total Device Dissipation FR–5 Board TA = 25°C
PD 1100
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
Unit V
A oC mW
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Value 110
Unit ℃/W
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LP2305DSLT1G , S-LP2305DSLT1G
ELECTRICAL...