LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), Vg...
LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode
MOSFET
VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON),
[email protected], Ids@5A = 52mΩ
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
LN4812LT1G S-LN4812LT1G
LN4812LT3G S-LN4812LT3G
Marking N48 N48
Shipping 3000/Tape&Reel 10000/Tape&Reel
LN4812LT1G S-LN4812LT1G
3
1 2
SOT– 23 (TO–236AB)
N - Channel 3
1
2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source
Voltage VGS Gate-Source
Voltage ID Continuous Drain Current IDM Pulsed Drain Current 1)
PD Maximum Power Dissipation
TA = 25oC TA = 75oC
30 ± 20
6 30 1.4 0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
RθJC Junction-to-Case Thermal Resistance
RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing
-55 to 150 50 90
Unit V
A
W oC oC/W
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
LN4812LT1G , S-LN4812LT1G
ELECTRICAL CHARACTERISTICS
Symbol Parameter Static
BVDSS Drain-Source Break...