S-AU81

www.DataSheet4U.com S-AU81 RF Power Amplifier Module S-AU81 Power Amplifier Modules for Domestic cdmaOne · · · · · GaAs HBT Micro PA (on-chip bias circuit and matching circuit) Output power: Po = 27.0dBmW (min) Gain: Gp = 28.0dB (typ.) Total current: It (1) = 385 mA (typ.) (@Pout = 27.0dBmW) Low-voltage operation: Operation at VCC = 1.5 V is possible It (2) = 97 mA (typ) (@Pout = 14dBmW, VCC = 1.5 V) This device features an output control pin which can be switched between low-power and high-power settings. It = 90 mA (typ.) (@Pout = 14dBmW, VCC = 2.70 V) Unit: mm · JEDEC JEITA TOSHIBA Weight: 0.0 g (typ.) ― ― 5-6A Maximum Ratings (Ta = 25°C) Characteristics Supply voltage 1 Supply voltage 2 Control voltage Collector current Power dissipation Operating temperature Storage temperature range Symbol VCC1 VCC2 Vcon ICC PD (Note 1) Top Tstg Rating 5 5 4 1 2 -20~+60 -30~+125 Unit V V V A W °C °C Note 1: Ta = 25°C Marking Pin No.1 Abbreviated product no. U81 Monthly lot number 1 2001-11-06 S-AU81 Electrical Characteristics (Tc = 25°C) Characteristics Power gain (1) Control current Total current (1) Adjacent-channel power ratio (1) Power gain (2) Total current (2) Adjacent-channel power ratio (2) Symbol Gp (1) Icon It (1) Test Condition VCC1, VCC 2 = 3.6 V, Vcon = 2.85 V (Note 2), Po = 27dBmW f = 887~925 MHz, Pin = adjust, ZG = ZL = 50 W 900 kHz 1.98 MHz Min 25.0 ¾ ¾ ¾ ¾ 21.0 ¾ Typ. 28.0 3 385 -50 -60 24.0 97 -50 -60 27.0 Max ¾ 5 ¾ -45 -56 Unit dB mA mA dB dB dB mA dB d...