RX1214B130Y

DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure provides high emitter efficiency Gold metallization with barrier realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing and reduces thermal resistance Internal input and output prematching networks allow an easier design of circuits. APPLICATIONS Common-base class C broadband pulsed power amplifiers for radar applications in the 1.2 to 1.4 GHz band. Also suitable for long pulse, heavy duty operation within this band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. RX1214B80W; RX1214B130Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier. MODE OF OPERATION Class C RX1214B80W CONDITIONS tp = 500 µs; δ = 10% f (GHz) 1.2 to 1.4 1.2 to 1.4 VCC (V) 40 50 PL (W) ≥80 ≥130 Gp (dB) ≥7 ≥7 ηC (%) ≥35 ≥35 Class C tp = 150 µs; RX1214B130Y δ = 5% PINNING - SOT439A PIN 1 2 3 collector emitter DESCRIPTION base connected to flange handbook, 4 columns 1 c b 3 ...