RUH3051L
N-Channel Advanced Power MOSFET
Features
• 30V/50A RDS (ON) =4.8mΩ(Typ.)@VGS=10V RDS (ON) =6.8mΩ(Typ.)@VGS=4.5...
RUH3051L
N-Channel Advanced Power
MOSFET
Features
30V/50A RDS (ON) =4.8mΩ(Typ.)@VGS=10V RDS (ON) =6.8mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Applications
DC/DC Converters On board power for server Synchronous rectification
Pin Description
D
G S TO252
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source
Voltage Gate-Source
Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
Ruichips Semiconducto...