Features • VRRM= 200V
IF(AV)=2x 10A
• Ultra Fast Recovery Time • High Surge Capability • Low Leakage Current • Low Forwa...
Features VRRM= 200V
IF(AV)=2x 10A
Ultra Fast Recovery Time High Surge Capability Low Leakage Current Low Forward
Voltage Drop Avalanche Rated Lead Free and Green Devices Available
Applications
High Speed Power Switching
RUD2H20Q2
Ultral Fast Recovery Diode Pin Description
TO3P
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VRRM VR
Maximum Repetitive Reverse
Voltage Maximum DC Reverse
Voltage
IF(AV)
per Device Average Rectified Forward Current, TC=130°C
per Diode
IFSM TSTG
TJ
Peak Forward Surge Current,8.3ms Half Sine Wave Storage Temperature Range Operating Junction Temperature
Mounted on Large Heat Sink
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Mounted on Large Heat Sink
ΕAS①
Avalanche Energy, Single Pulsed
Fast Recovery Diode
Rating
Unit
200 200 20 10 100 -55 to 150 150
V V A A A °C °C
1.5 °C/W 50 °C/W
64 mJ
Ruichips Semiconductor Co...
