Features
•800V/7A, RDS (ON) =1.6Ω (Typ.) @ VGS=10V
• Gate charge minimized • Low Crss( Typ. 15pF) • Extremely high dv/dt...
Features
800V/7A, RDS (ON) =1.6Ω (Typ.) @ VGS=10V
Gate charge minimized Low Crss( Typ. 15pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Available
RU8H7R
N-Channel Advanced Power
MOSFET
MOSFET
Pin Description
TO-220
Applications
High efficiency switch mode power supplies Lighting
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2012
Rating
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