RU8205G
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/6A, RDS (ON) =21mΩ (Typ.) @ VGS=4.5V RDS (ON) =30mΩ (Typ....
RU8205G
N-Channel Advanced Power
MOSFET
MOSFET
Features
20V/6A, RDS (ON) =21mΩ (Typ.) @ VGS=4.5V RDS (ON) =30mΩ (Typ.) @ VGS=2.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Available
Pin Description
TSSOP-8
Applications
Power Management
Absolute Maximum Ratings
Dual N-Channel
MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
TA=25°C Continuous Drain Current(VGS=4.5V)
TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
20 ±12 150 -55 to 150 1.7
①
24 6 4.5 1.5
0.96 83.5
Unit
V °C °C A
A A
W °C/W
Copyright© Ruichips Semiconductor Co., Ltd Rev. C– NOV., 2011
www.ruichips.com
RU8205G
Elect...
