RU8205C6

RU8205C6 N-Channel Advanced Power MOSFET Features 20V/6A, RDS (ON) =18mΩ(Typ.)@VGS=4.5V RDS (ON) =23mΩ(Typ.)@VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management Pin Description G2 D1/D2 G1 S2 D1/D2 S1 SOT23-6 D1 D2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. C– AUG., 2015 1 G1 G2 S1 S2 Dual N-Channel MOSFET ...