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RU6Z5R Datasheet

Part Number RU6Z5R
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU6Z5R DatasheetRU6Z5R Datasheet (PDF)

RU6Z5R N-Channel Advanced Power MOSFET Features • 650V/4.5A, RDS (ON) =1800mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Fast Switching • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High efficiency switch mode power supplies • Lighting TO220 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperatu.

  RU6Z5R   RU6Z5R






N-Channel Advanced Power MOSFET

RU6Z5R N-Channel Advanced Power MOSFET Features • 650V/4.5A, RDS (ON) =1800mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Fast Switching • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High efficiency switch mode power supplies • Lighting TO220 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2012 1 N-Channel MOSFET Rating Unit TC=25°C 650 ±30 150 -5.


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