RU6888
N-Channel Advanced Power MOSFET
MOSFET
Features
• 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V
• Ultra Low On-Resis...
RU6888
N-Channel Advanced Power
MOSFET
MOSFET
Features
68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V
Ultra Low On-Resistance
Exceptional dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
175°C Operating Temperature
Lead Free and Green Available
Applications
Switching Application Systems Inverter Systems
Pin Description
TO-220 TO-263
TO-220F TO-247
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
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