RU65110R
N-Channel Advanced Power MOSFET
Features
• 65V/110A, RDS (ON) =6mΩ(Typ.)@VGS=10V
• Super High Dense Cell Desig...
RU65110R
N-Channel Advanced Power
MOSFET
Features
65V/110A, RDS (ON) =6mΩ(Typ.)@VGS=10V
Super High Dense Cell Design
Ultra Low On-Resistance
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
DC-DC Converters and Off-line UPS Switching Applications
N-Channel
MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2012
Rating
65 ...