RU60E6D

RU60E6D N-Channel Advanced Power MOSFET MOSFET Features 60V/6A, RDS (ON) =32mΩ (Typ.) @ VGS=10V RDS (ON) =40mΩ (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged Ultra Low On-Resistance Lead Free and Green Available Pin Description SOT-223 Applications Power Management DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID Continuous Drain Current(VGS=10V) TA=25°C TA=70°C PD ② RθJA Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 60 ±20 150 -55 to 150 3 24 ① 6 5 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAY., 2011 www.rui...