RU60E16L
N-Channel Advanced Power MOSFETMOSFET
Features
60V/16A, RDS (ON) =60mΩ(Typ.)@VGS=10V RDS (ON) =75mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Applications
Power Management
Pin Description
TO252
N-Channel MOSFET
Absolute...
