RU6085H

RU6085H N-Channel Advanced Power MOSFET Features 60V/80A, RDS (ON) =6mΩ(Typ.)@VGS=10V RDS (ON) =6.5mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed Lead Free and Green Devices Available (RoHS Compliant) Pin Description SOP-8 Applications Power Management. Switch Applications. Load switch Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC RJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 1 N-Channel...