RU40L10L
P-Channel Advanced Power MOSFET
MOSFET
Features
• -40V/-32A, RDS (ON) =20mΩ(Typ.)@VGS=-10V RDS (ON) =30mΩ(Typ....
RU40L10L
P-Channel Advanced Power
MOSFET
MOSFET
Features
-40V/-32A, RDS (ON) =20mΩ(Typ.)@VGS=-10V RDS (ON) =30mΩ(Typ.)@VGS=-4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Applications
Power Supplies Inverter
Pin Description
TO252
Absolute Maximum Ratings
P-Channel
MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating
-40 ±20 175 -55 to 175 -32
①
-120 -32 -23 52...
