RU4099

RU4099 N-Channel Advanced Power MOSFET Features Pin Description · 40V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-220 TO-220F TO-263 TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol Parameter N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 40 ±25 175 -55 to 175 200 ① V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC RθJA 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 800 200 140 400 230 ② A W 0.45 62.5 °C/W Drain-Source Avalanche Ratings EAS Avalanche Energy ,Single Pulsed Storage Temperature Range 1400 mJ -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev. B –JUN., 2010 www.ruichips.com http://www.Datasheet4U.com RU4099 Electrical Characteristics Parameter Static Characteristics BVDSS (TA=25°C Unless Otherwise Noted) RU4099 Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS= 40V, VGS=0V TJ=85°C 40 1 30 2 3 4 ±100 2.8 3.5 V µA V nA mΩ Symbol IDSS Zero Gate ...