RU4090L

RU4090L N-Channel Advanced Power MOSFET MOSFET Features 40V/90A, RDS (ON) =4mΩ(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications Motor Drivers Switch Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 Rating 40 ±20 175 -55 to 175 ① ...