RU3070M
N-Channel Advanced Power MOSFET
Features
• 30V/70A, RDS (ON) =3.8mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V
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RU3070M
N-Channel Advanced Power
MOSFET
Features
30V/70A, RDS (ON) =3.8mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design
Reliable and Rugged
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
PDFN5060
Applications
DC/DC Conversion Switching Application
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012
N-Channel
MOSFET
TC=25°C
TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C
Rating
Unit
30 ±20 150 -55 to 150 50
V
°C °C A
②
280
①
70
①
52
③
23...
