RU304B
N-Channel Advanced Power MOSFET
MOSFET
Features
• 30V/4A, RDS (ON) =44mΩ (Typ.) @ VGS=4.5V RDS (ON) =53mΩ (Typ.)...
RU304B
N-Channel Advanced Power
MOSFET
MOSFET
Features
30V/4A, RDS (ON) =44mΩ (Typ.) @ VGS=4.5V RDS (ON) =53mΩ (Typ.) @ VGS=2.5V
Low RDS (ON)
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Available
Pin Description
SOT-23
Applications
Load/System Switch
Absolute Maximum Ratings
N-Channel
MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=4.5V)
TA=25°C TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
30 ±12 150 -55 to 150 1.1
①
15 4 2.9 1 0.64 125
Unit
V °C °C A
A A
W °C/W
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012
www.ruichips.com
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