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RU1HP60Q Datasheet

Part Number RU1HP60Q
Manufacturers Ruichips
Logo Ruichips
Description P-Channel Advanced Power MOSFET
Datasheet RU1HP60Q DatasheetRU1HP60Q Datasheet (PDF)

Features • -100V/-60A, RDS (ON) =18mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested Applications •Load switch RU1HP60Q P-Channel Advanced Power MOSFET Pin Description G DS TO247 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forw.

  RU1HP60Q   RU1HP60Q






Part Number RU1HP60R
Manufacturers Ruichips
Logo Ruichips
Description P-Channel Advanced Power MOSFET
Datasheet RU1HP60Q DatasheetRU1HP60R Datasheet (PDF)

RU1HP60R P-Channel Advanced Power MOSFET Features • -100V/-60A, RDS (ON) =18mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applications •Inverters Pin Description G DS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Vol.

  RU1HP60Q   RU1HP60Q







P-Channel Advanced Power MOSFET

Features • -100V/-60A, RDS (ON) =18mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested Applications •Load switch RU1HP60Q P-Channel Advanced Power MOSFET Pin Description G DS TO247 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2016 1 P-Channel MOSFET Rating Unit TC=25°C -100 ±25 175 -55 to 175 -60 V °C °C A TC=25°C TC=25°C TC=100.


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