RU1HL13L

RU1HL13L P-Channel Advanced Power MOSFET MOSFET Features -100V/-13A, RDS (ON) =160mΩ(Typ.)@VGS=-10V RDS (ON) =180mΩ(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters Pin Description TO252 Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating -100 ±20 175 -55 to 175 -13 ① -...