RU1HE4H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 100V/4A, RDS (ON) =72mΩ (Typ.) @ VGS=10V RDS (ON) =80mΩ (Typ....
RU1HE4H
N-Channel Advanced Power
MOSFET
MOSFET
Features
100V/4A, RDS (ON) =72mΩ (Typ.) @ VGS=10V RDS (ON) =80mΩ (Typ.) @ VGS=4.5V
Super High Dense Cell Design
Reliable and Rugged
ESD Protected
Lead Free and Green Available
Pin Description
SOP-8
Applications
Power Management Converters.
Absolute Maximum Ratings
N-Channel
MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
100 ±20 150 -55 to 150
4
①
16 4
3.3 2.5 1.6 50
Unit
V °C °C A
A A
W °C/W
Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2011
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