RU1HE3D

RU1HE3D N-Channel Advanced Power MOSFET MOSFET Features 100V/3A, RDS (ON) =130mΩ (Typ.) @ VGS=10V RDS (ON) =140mΩ (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Available Pin Description SOT-223 Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=70°C PD ② RθJA Maximum Power Dissipation TC=25°C TC=70°C Thermal Resistance-Junction to Ambient Rating 100 ±20 150 -55 to 150 3 12 ① 3 2.5 2.5 1.6 50 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. D – OCT., 2...