Features
• 100V/6A, RDS (ON) =40mΩ (Typ.) @ VGS=10V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and...
Features
100V/6A, RDS (ON) =40mΩ (Typ.) @ VGS=10V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Available
RU1H7H
N-Channel Advanced Power
MOSFET
MOSFET
Pin Description
SOP-8
Applications
SMPS
Absolute Maximum Ratings
N-Channel
MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current(VGS=10V)
TA=25°C TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
100 ±20 150 -55 to 150 3.9
①
24 6 4.7 3.1 2 40
Unit
V °C °C A
A A
W °C/W
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2012
www.ruichips.com
RU1H7H
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symb...